A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability
نویسندگان
چکیده
Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponents and degradation behavior under dynamic bias in agreement with experimental observations are discussed. Implications regarding ultra-scaled surround-gate device structures are presented.
منابع مشابه
MOSFET DEGRADATION DUE TO NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI) AND HOT CARRIER INJECTION (HCI) AND ITS IMPLICATIONS FOR RELIABILITY-AWARE VLSI DESIGN A Dissertation
Kufluoglu, Haldun Ph.D., Purdue University, December, 2007. MOSFET Degradation due to Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) and Its Implications for Reliability-aware VLSI Design . Major Professor: Muhammad A. Alam. The scaling trends in CMOS technology and operating conditions give rise to serious degradation mechanisms such as Negative Bias Temperature I...
متن کاملOn the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs
The introduction of SiGe channel pMOSFETs for high mobility devices is expected to enhance the impact ionization phenomenon, making it necessary to study Hot Carrier (HC) degradation also for the p-channel MOSFET reliability. The study of pure HC effects on pMOSFETs is complicated due to the mixing with Negative Bias Temperature Instability (NBTI). In the first part of this work the interaction...
متن کاملExperimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout
In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wear...
متن کاملRobust flip-flop Redesign for Violation Minimization Considering Hot Carrier Injection (HCI) and Negative Bias Temperature Instability (NBTI)
As the CMOS device becomes smaller, the process and aging variations become one of the major issues for circuit reliability and yield. Thus, a number of studies on the aging effects are currently underway. In this paper, we measure the setup/hold time and the variations considering aging effects such as a hot carrier injection (HCI) and negative bias temperature instability (NBTI) on flip-flop....
متن کاملSimulation-Based Analysis For NBTI Degradation In Combinational CMOS VLSI Circuits
The negative-bias temperature instability (NBTI) is one of the dominant aging degradation mechanism in today Very Large Scale Integration (VLSI) Integrated Circuits (IC). With the further decreasing of the transistor dimensions and reduction of supply voltage, the NBTI degradation may become a critical reliability threat. Nevertheless, most of the EDA tools lack in the ability to predict and an...
متن کامل